SVF7N65T/f_datasheet 7a, 650v n-channel mosfet general description SVF7N65T/f is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc- dc converters and h-bridge pwm motor drivers. features ? 7a,650v,r ds(on)(typ) =1.1 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 1 of 8 silan vdmos code of f-cell process nominal current,using 1 or 2 digits: example:4 denotes 4a, 10 denotes 10a, 08 denotes 0.8a nominal voltage,using 2 digits example: 60 denotes 600v, 65 denotes 650v. package information. example:t:to-220;f:to-220f. special features indi cation, may be omitted. example: e denotes embeded esd structure n denotes n channel ordering information part no. package marking material packing SVF7N65T to-220-3l SVF7N65T pb free tube svf7n65f to-220f-3l svf7n65f pb free tube
SVF7N65T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 2 of 8 absolute maximum ratings (t c =25 c unless otherwise noted) ratings characteristics symbol SVF7N65T svf7n65f unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v t c = 25 c 7.0 drain current t c = 100 c i d 4.0 a drain current pulsed i dm 28 a 145 46 w power dissipation(t c =25 c) -derate above 25 c p d 1.16 0.37 w/ c single pulsed avalanche energy (note 1) e as 435 mj operation junction temperature range t j -55 +150 c storage temperature range t stg -55 +150 c thermal characteristics ratings characteristics symbol SVF7N65T svf7n65f unit thermal resistance, junction-to-case r jc 0.86 2.7 c/w thermal resistance, junction-to-ambient r ja 62.5 120 c/w electrical characteristics (t c =25 c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 650 -- -- v drain-source leakage current i dss v ds =650v, v gs =0v -- -- 10 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =3.5a -- 1.1 1.4 input capacitance c iss -- 917.7 -- output capacitance c oss -- 98.6 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 1.90 -- pf turn-on delay time t d(on) -- 29.00 -- turn-on rise time t r -- 48.00 -- turn-off delay time t d(off) -- 39.00 -- turn-off fall time t f v dd =10v, r g =25 , i d =7.0a (note 2,3) -- 33.00 -- ns total gate charge q g -- 15.50 -- gate-source charge q gs -- 5.40 -- gate-drain charge q gd v ds =520v, i d =7.0a, v gs =10v (note 2,3) -- 4.50 -- nc
SVF7N65T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 3 of 8 source-drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit continuous source current i s -- -- 7.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 28.0 a diode forward voltage v sd i s =7.0a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 365 -- ns reverse recovery charge q rr i s =7.0a,v gs =0v, dif/dt=100a/s(note 2) -- 3.4 -- c notes: 1. l=30mh, i as =5.0a, v dd =100v, r g =25 ,starting t j =25 c; 2. pulse test: pulse width 300 s, duty cycle 2%; 3. essentially independent of operating temperature.
SVF7N65T/f_datasheet typical characteristics hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 4 of 8
SVF7N65T/f_datasheet typical characteristics(continued) hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 5 of 8
SVF7N65T/f_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 6 of 8 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
SVF7N65T/f_datasheet package outline to-220-3l unit: mm to-220f-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 7 of 8
SVF7N65T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2011.02.15 http://www.silan.com.cn page 8 of 8 disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manuf acturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! attachment revision history date rev description page 2010.12.13 1.0 original 2011.02.15 1.1 modify ?absolute maximum ratings? and ?electrical characteristics?
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